Johnson J W, Ren F, Pearton S J, Baca A G, Han J, Dabiran A M, Chow P P
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA.
J Nanosci Nanotechnol. 2002 Jun-Aug;2(3-4):325-32. doi: 10.1166/jnn.2002.092.
The DC and RF performance of AlGaN/GaN high electron mobility transistors with nanoscale gate lengths is presented. The layer structures were grown by either metal organic chemical vapor deposition or rf plasma-assisted molecular beam epitaxy. Excellent scaling properties were observed as a function of both gate length and width and confirm that these devices are well suited to both high speed switching and power microwave applications.
介绍了具有纳米级栅长的AlGaN/GaN高电子迁移率晶体管的直流和射频性能。这些层结构通过金属有机化学气相沉积或射频等离子体辅助分子束外延生长。观察到作为栅长和宽度函数的优异缩放特性，证实这些器件非常适合高速开关和功率微波应用。
