Chen Wei, Grouquist Dennis, Roark Joel
Nomadics, Inc., 1024 South Innovation Way, Stillwater, Oklahoma 74074, USA.
J Nanosci Nanotechnol. 2002 Feb;2(1):47-53. doi: 10.1166/jnn.2002.067.
Strong electroluminescence was observed in a CdTe nanoparticle light-emitting diode that was fabricated by layer-by-layer assembly of poly(p-phenylenevinylene) and CdTe nanoparticles. The turn-on voltage for the electroluminescence is 4.0 V. The electroluminescence is exclusively from CdTe nanoparticles, with a 30 nm red shift in emission wavelength from the photoluminescence and shifts to longer wavelengths at higher applied voltages. Possible mechanisms for this red shift are discussed, and it is concluded that the de-trapping of surface states and trap centers due to electric excitation, the involvement of traps in the electroluminescence, and the quantum confined Stark effect are the major reasons for the red shift.
在通过聚对苯撑乙烯和碲化镉纳米颗粒逐层组装制备的碲化镉纳米颗粒发光二极管中观察到了强烈的电致发光。该电致发光的开启电压为4.0V。电致发光完全来自碲化镉纳米颗粒，其发射波长相对于光致发光有30nm的红移，并且在更高的施加电压下向更长波长移动。讨论了这种红移的可能机制，并得出结论，由于电激发导致的表面态和陷阱中心的去俘获、陷阱在电致发光中的参与以及量子限制斯塔克效应是红移的主要原因。
