Li Quan, Wang Chunrui
Department of Physics, The Chinese University of Hong Kong, Shatin, New Territory, Hong Kong, ROC.
J Am Chem Soc. 2003 Aug 20;125(33):9892-3. doi: 10.1021/ja035787i.
A simple one-step thermal evaporation of CdSe powder using Si substrate at controlled conditions results in ultrauniform Si-core/CdSe-sheath nanocables. These nanocables are approximately 80 nm in diameter and several tens of micrometers in length. Detailed microstructure and chemical composition analysis of the nanocables indicates that they are composed of a single crystalline Si (cubic) core and CdSe (hexagonal) sheath. The experimental evidence suggested that the Si nanowires can be directly grown from the Si substrate via an oxide-assisted growth mechanism and further served as templates for CdSe, resulting in nanocable heterostructures.
在可控条件下，使用硅衬底对硒化镉粉末进行简单的一步热蒸发，可得到超均匀的硅芯/硒化镉鞘层纳米电缆。这些纳米电缆的直径约为80纳米，长度为几十微米。对纳米电缆的详细微观结构和化学成分分析表明，它们由单晶硅（立方）芯和硒化镉（六方）鞘层组成。实验证据表明，硅纳米线可以通过氧化物辅助生长机制直接从硅衬底上生长出来，并进一步作为硒化镉的模板，从而形成纳米电缆异质结构。
