Mathur Sanjay, Shen Hao, Donia Nicole, Rügamer Thomas, Sivakov Vladimir, Werner Ulf
Leibniz Institute of New Materials, Saarbruecken, Germany.
J Am Chem Soc. 2007 Aug 8;129(31):9746-52. doi: 10.1021/ja071931e. Epub 2007 Jul 13.
Single-step synthesis of one-dimensional Ge/SiCxNy core-shell nanocables was achieved by chemical vapor deposition of the molecular precursor [Ge{N(SiMe3)2}2]. Single crystalline Ge nanowires (diameter approximately 60 nm) embedded in uniform SiCxNy shells were obtained in high yields, whereby the growth process was not influenced by the nature of substrates. The shell material exhibited high oxidation and chemical resistance at elevated temperatures (up to 250 degrees C) resulting in the preservation of size-dependent semiconductor properties of germanium nanowires, such as intact transport of charge carriers and reduction of energy consumption, when compared to pure Ge nanowires.
通过分子前驱体[Ge{N(SiMe3)2}2]的化学气相沉积实现了一维Ge/SiCxNy核壳纳米电缆的一步合成。嵌入均匀SiCxNy壳层中的单晶锗纳米线（直径约60纳米）以高产率获得，生长过程不受衬底性质的影响。与纯锗纳米线相比，壳材料在高温（高达250摄氏度）下表现出高抗氧化性和化学抗性，从而保留了锗纳米线尺寸依赖的半导体特性，如电荷载流子的完整传输和能耗的降低。
