Wu Chun-yan, Zhong Shao, Chen Yi-ming, Zhang Hai-yan, He Yan-yang, Zhu Yan-juan
Department of Physics, Guangdong University of Technology, Guangzhou 510090, China.
Guang Pu Xue Yu Guang Pu Fen Xi. 2002 Jun;22(3):495-7.
In this article, We report our measured results of UV-Vis absorption, X-ray diffraction and scanning electron microscope for Sn-doped C60 thin film. The results show the two absorption peaks in respective short wave range of UV absorption have an apparent decline after doping Sn, and the position of three absorption peaks have a slightly shift respectively to red wave direction. The electron absorption transition of Sn-C60 film is indirect transition, and there are impurity levels in the energy band; X-ray diffraction shows that the crystal structure of Sn-C60 film is f. c. c. The film is in the form of tiny drops in nano magnitude.
在本文中，我们报告了掺锡C60薄膜的紫外-可见吸收、X射线衍射和扫描电子显微镜的测量结果。结果表明，掺锡后紫外吸收短波范围内的两个吸收峰明显下降，三个吸收峰的位置分别向红波方向略有移动。Sn-C60薄膜的电子吸收跃迁为间接跃迁，能带中存在杂质能级；X射线衍射表明，Sn-C60薄膜的晶体结构为面心立方。该薄膜呈纳米级微小液滴的形式。
