You J, Jiang G, Xu K
Shanghai University, Shanghai Enhanced Laboratory of Ferrometallurgy, 200072 Shanghai.
Guang Pu Xue Yu Guang Pu Fen Xi. 2000 Dec;20(6):797-9.
The structure of Na2Si2O5 from room temperature up to 1,773 K are studied by high temperature Raman spectroscopy using copper vapor pulse laser and integral time-resolved detection technique without any black-body radiation effect on spectral record. Back-scattering optical configuration is coupled with confocal collection of Raman signal of macro-sample in the high temperature shaft tube furnace. Results show that temperature-dependent Raman spectra can clearly indicate phase transition during melting. Relative densities of various kinds of SiO4(n-4) (n, bridging-oxygen number binding to one tetrahedron former Si) tetrahedrons can be qualitatively and quantitatively resolved by Gaussian spectral deconvolution. Obviously high temperature Raman spectroscopy provides an useful tool for the micro-structure research of materials under high temperature.
利用铜蒸汽脉冲激光和积分时间分辨检测技术,通过高温拉曼光谱对Na2Si2O5从室温到1773 K的结构进行了研究,光谱记录过程中无任何黑体辐射效应。背散射光学配置与高温竖管炉中宏观样品拉曼信号的共焦收集相结合。结果表明,温度依赖的拉曼光谱能够清晰地指示熔化过程中的相变。通过高斯光谱去卷积可以定性和定量地分辨出各种SiO4(n - 4)(n为与一个四面体形成体Si结合的桥氧数)四面体的相对密度。显然,高温拉曼光谱为高温下材料的微观结构研究提供了一种有用的工具。