Zhu P, Chen P, Li C, Luo G, Jia H, Liu Z, Qian P
Institute of Microelectronics, Tsinghua University, 100084 Beijing.
Guang Pu Xue Yu Guang Pu Fen Xi. 2001 Aug;21(4):464-7.
This paper presents a Raman method, which is no deconstructed, to measure Ge content and strain in SiGe alloy films and some samples, which is grown by UHV/CVD with different Ge content and thickness, have been tested by above method. Two samples among them were measured by DCXRD, the results tested by DCXRD are consistent with Raman results that proves that the method in this paper is reliable and accurate. The SiGe PHMOSFET has been fabricated by the samples, the transconductance reaches 112 ms.mm-1 for the device with 0.5 micron channel.
本文提出了一种无需解构的拉曼方法来测量SiGe合金薄膜中的锗含量和应变，并且对一些通过超高真空化学气相沉积（UHV/CVD）生长的具有不同锗含量和厚度的样品进行了该方法的测试。其中两个样品通过双晶X射线衍射仪（DCXRD）进行了测量，DCXRD测试结果与拉曼结果一致，这证明了本文所提出的方法可靠且准确。利用这些样品制备了SiGe p型金属氧化物半导体场效应晶体管（PHMOSFET），对于沟道长度为0.5微米的器件，其跨导达到了112 mS·mm⁻¹ 。
