Tan H, Zhang P, Liu X, Wu C
Engineering School of Material and Metallurgy, Kunming University of Science and Technology, 650051 Kunming.
Guang Pu Xue Yu Guang Pu Fen Xi. 2001 Aug;21(4):498-500.
The quality of GaAs layer on the Si substrate under different growth conditions with HWE technology was studied by Raman and PL spectra. The results show that the ratio of peak value to area for the TO peak at 265 cm-1 increased gradually with the improvement of the GaAs crystallinity quality for the GaAs layer at 300 K. The FWHM of Raman spectra of TO peak at 265 cm-1 is narrow, and the Raman shift is 2 cm-1. In the PL spectra, the FWHM at 900 nm is narrow. Then the results show GaAs layer is highly structural quality. But if we can not measure the PL peak at 900 nm, or the FWHM of Raman spectra of TO peak at 265 cm-1 is not narrow, the GaAs layer is not crystallinity. Therefore, we can estimate the layer quality by Raman and PL spectra.
利用拉曼光谱和光致发光（PL）光谱研究了采用热壁外延（HWE）技术在不同生长条件下硅衬底上砷化镓（GaAs）层的质量。结果表明，在300 K时，随着GaAs层结晶质量的提高，265 cm-1处横向光学（TO）峰的峰值与面积之比逐渐增大。265 cm-1处TO峰的拉曼光谱半高宽（FWHM）较窄，拉曼位移为2 cm-1。在PL光谱中，900 nm处的FWHM较窄。结果表明GaAs层具有很高的结构质量。但是，如果无法测量900 nm处的PL峰，或者265 cm-1处TO峰的拉曼光谱FWHM不窄，则GaAs层不具有结晶性。因此，我们可以通过拉曼光谱和PL光谱来评估层质量。
