Ihn Soo-Ghang, Song Jong-In, Kim Tae-Wook, Leem Dong-Seok, Lee Takhee, Lee Sang-Geul, Koh Eui Kwan, Song Kyung
Center for Distributed Sensor Networks, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea.
Nano Lett. 2007 Jan;7(1):39-44. doi: 10.1021/nl0618795.
GaAs nanowires were epitaxially grown on Si(001) and Si(111) substrates by using Au-catalyzed vapor-liquid-solid (VLS) growth in a solid source molecular beam epitaxy system. Scanning electron microscopy analysis revealed that almost all the GaAs nanowires were grown along <111> directions on both Si substrates for growth conditions investigated. The GaAs nanowires had a very uniform diameter along the growth direction. X-ray diffraction data and transmission electron microscopy analysis revealed that the GaAs<111> nanowires had a mixed crystal structure of the hexagonal wurtzite and the cubic zinc-blende. Current-voltage characteristics of junctions formed by the epitaxially grown GaAs nanowires and the Si substrate were investigated by using a current-sensing atomic force microscopy.
通过在固体源分子束外延系统中采用金催化的气-液-固（VLS）生长法，在Si(001)和Si(111)衬底上外延生长了砷化镓纳米线。扫描电子显微镜分析表明，在所研究的生长条件下，几乎所有的砷化镓纳米线都在两种硅衬底上沿<111>方向生长。砷化镓纳米线在生长方向上具有非常均匀的直径。X射线衍射数据和透射电子显微镜分析表明，砷化镓<111>纳米线具有六方纤锌矿和立方闪锌矿的混合晶体结构。通过使用电流传感原子力显微镜研究了由外延生长的砷化镓纳米线和硅衬底形成的结的电流-电压特性。
