Ding S J, Wang P F, Zhang W, Wang J T, Wei W L
Department of Electronic Engineering, Fudan University, Shanghai 200433, China.
Guang Pu Xue Yu Guang Pu Fen Xi. 2001 Dec;21(6):745-8.
Amorphous fluorinated carbon films have been prepared from the gaseous mixture of CH4 and C4F8 by plasma enhanced chemical vapor deposition (PECVD) method. The dielectric constant of the deposited film under the experimental conditions is 2.3. Fourier transform infrared spectrum (FTIR) indicates that the film contains minor unsaturated double bonds such as C=O, C=C, etc in addition to CFn (n = 1-3) configurations. However, no sign reveals the existence of C-H and O-H in the film. Further, X-ray photoelectron spectrum (XPS) verifies that carbon in the deposited film has six chemical states, which are CF3 (8%), CF2(19%), CF (26.7%), C-CFn (42.5%), C-C(3.3%) and C=O (0.5%). It indicates that about 54% of carbon atoms in the film bond with fluorine atoms, and around 43% bond with carbon atoms of CFn configurations instead of bonding directly with fluorine atoms. The adjacent carbon atoms without bonding with fluorine are very less.
通过等离子体增强化学气相沉积（PECVD）方法，由CH4和C4F8的气体混合物制备了非晶态氟化碳薄膜。在实验条件下，沉积薄膜的介电常数为2.3。傅里叶变换红外光谱（FTIR）表明，除了CFn（n = 1 - 3）构型外，该薄膜还含有少量不饱和双键，如C=O、C=C等。然而，没有迹象表明薄膜中存在C - H和O - H。此外，X射线光电子能谱（XPS）证实，沉积薄膜中的碳具有六种化学状态，分别为CF3（8%）、CF2（19%）、CF（26.7%）、C - CFn（42.5%）、C - C（3.3%）和C=O（0.5%）。这表明薄膜中约54%的碳原子与氟原子键合，约43%与CFn构型的碳原子键合，而不是直接与氟原子键合。未与氟键合的相邻碳原子非常少。
