α-Si:H/Al和Al/α-Si:H结构中铝诱导非晶硅结晶的透射电子显微镜和X射线衍射分析。
Transmission electron microscopy and X-Ray diffraction analysis of aluminum-induced crystallization of amorphous silicon in alpha-Si:H/Al and Al/alpha-Si:H structures.
作者信息
Kishore Ram, Hotz C, Naseem H A, Brown W D
机构信息
Electron Microscopy, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India.
出版信息
Microsc Microanal. 2005 Apr;11(2):133-7. doi: 10.1017/S1431927605050208.
Solid phase crystallization of plasma-enhanced chemical-vapor-deposited (PECVD) amorphous silicon (alpha-Si:H) in alpha-Si:H/Al and Al/alpha-Si:H structures has been investigated using transmission electron microscopy (TEM) and X-ray diffraction (XRD). Radiative heating has been used to anneal films deposited on carbon-coated nickel (Ni) grids at temperatures between 200 and 400 degrees C for TEM studies. alpha-Si:H films were deposited on c-Si substrates using high vacuum (HV) PECVD for the XRD studies. TEM studies show that crystallization of alpha-Si:H occurs at 200 degrees C when Al film is deposited on top of the alpha-Si:H film. Similar behavior was observed in the XRD studies. In the case of alpha-Si:H deposited on top of Al films, the crystallization could not be observed at 400 degrees C by TEM and even up to 500 degrees C as seen by XRD.
利用透射电子显微镜（TEM）和X射线衍射（XRD）研究了α-Si:H/Al和Al/α-Si:H结构中通过等离子体增强化学气相沉积（PECVD）制备的非晶硅（α-Si:H）的固相结晶。在进行TEM研究时，采用辐射加热对沉积在碳包覆镍（Ni）网格上的薄膜在200至400摄氏度的温度下进行退火处理。采用高真空（HV）PECVD在c-Si衬底上沉积α-Si:H薄膜用于XRD研究。TEM研究表明，当在α-Si:H薄膜顶部沉积Al薄膜时，α-Si:H在200摄氏度时发生结晶。XRD研究中也观察到了类似的行为。在Al薄膜顶部沉积α-Si:H的情况下，通过TEM在400摄氏度时未观察到结晶，而通过XRD甚至在高达500摄氏度时也未观察到结晶。
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