Mo S, Liu Y, Yang Y, Cheng Y
Department of Analysis and Measurement Science, Wuhan University, 430072 Wuhan.
Guang Pu Xue Yu Guang Pu Fen Xi. 1999 Oct;19(5):734-7.
The chemical structure of carbon nitride thin films, prepared by rf-dc plasma enhanced chemical vapor deposition (PECVD) was studied by XPS. Analyzing the C(1s) and N(1s) core level lines indicated two types of chemical structure N-sp3C and N-sp2C binding states existed in the CN films. There is also little N-spC binding state in the CN film with a nitrogen content of 22%. The ratio of N/C in N-sp3C binding state is 1.28 which is near 4 : 3, thus demonstrated the existence of C3N4-like phase. High nitrogen content in the CN films is useful to increase the content of beta-C3N4 phase. Light changes of the chemical structure of the CN films can be observed under ion irradiation. With the increase of ion dose, the ratio of N-sp3C/N-sp2C increase, while the N/C ratio in the films decrease.
采用X射线光电子能谱（XPS）研究了通过射频直流等离子体增强化学气相沉积（PECVD）制备的氮化碳薄膜的化学结构。对C(1s)和N(1s)芯能级谱线的分析表明，在CN薄膜中存在两种化学结构，即N-sp3C和N-sp2C键合态。在氮含量为22%的CN薄膜中，也存在少量的N-spC键合态。N-sp3C键合态下的N/C比为1.28，接近4:3，从而证明了类C3N4相的存在。CN薄膜中的高氮含量有助于增加β-C3N4相的含量。在离子辐照下，可以观察到CN薄膜化学结构的轻微变化。随着离子剂量的增加，N-sp3C/N-sp2C的比例增加，而薄膜中的N/C比降低。
