Ludwig S, Osheroff D D
Department of Physics, Stanford University, Stanford, California 94305-4060, USA.
Phys Rev Lett. 2003 Sep 5;91(10):105501. doi: 10.1103/PhysRevLett.91.105501. Epub 2003 Sep 4.
In nonequilibrium experiments on the glasses Mylar and BK7, we measured the excess dielectric response after the temporary application of a strong electric bias field at millikelvin temperatures. A model recently developed describes the observed long time decays qualitatively for Mylar [Phys. Rev. Lett. 90, 105501(2003)]], but fails for BK7. In contrast, our results on both samples can be described by including an additional mechanism to the mentioned model with temperature independent decay times of the excess dielectric response. As the origin of this novel process beyond the "tunneling model" we suggest bias field induced structural rearrangements of "tunneling states" that decay by quantum mechanical tunneling.
在对聚酯薄膜和BK7玻璃进行的非平衡实验中,我们在毫开尔文温度下临时施加强电场偏置后测量了过量介电响应。最近开发的一个模型定性地描述了聚酯薄膜观察到的长时间衰减[《物理评论快报》90, 105501(2003)],但对BK7不适用。相比之下,我们在两个样品上的结果可以通过在上述模型中加入一个额外的机制来描述,该机制具有与温度无关的过量介电响应衰减时间。作为这个超越“隧穿模型”的新过程的起源,我们认为是偏置场诱导了“隧穿态”的结构重排,这些“隧穿态”通过量子力学隧穿而衰减。