Michelmann R W, Baumann H, Markwitz A, Meyer J D, Röseler A, Krimmel E F, Bethge K
Institut für Kernphysik, J.W. Goethe-Universität, August-Euler-Strasse 6, D-60486, Frankfurt, Germany.
Anal Bioanal Chem. 1995 Oct;353(3-4):403-7. doi: 10.1007/s0021653530403.
The molecular ions O(+)(2) and NO(+) are im- planted at room temperature into single-crystal silicon with an energy of E=6 keV/atom at fluences ranging from 2.5x10(16) to 3.5x10(17) at/cm(2). The samples are processed by electron beam rapid thermal annealing at 1100 ( degrees )C for 15 s. The depth distributions of the implanted specimens ((18)O) are determined by nuclear reaction analyses using the reaction (18)O(p,alpha)(15)N. Channeling-RBS measurements are performed to obtain the interface structure between the implanted layer and the single-crystal Si substrate. The chemical bonding state of as-implanted and implanted-annealed specimens is observed by FTIR ellipsometry measurements.
将分子离子O(+)(2)和NO(+)在室温下以E = 6 keV/原子的能量注入到单晶硅中，注入剂量范围为2.5×10(16)至3.5×10(17) at/cm(2)。样品在1100℃下通过电子束快速热退火处理15秒。使用反应(18)O(p,α)(15)N通过核反应分析确定注入样品((18)O)的深度分布。进行沟道背散射谱（Channeling-RBS）测量以获得注入层与单晶硅衬底之间的界面结构。通过傅里叶变换红外椭偏光谱（FTIR ellipsometry）测量观察注入态和注入退火态样品的化学键合状态。
