Bibić N, Milinović V, Milosavljević M, Schrempel F, Siljegović M, Lieb K P
VINCA Institute of Nuclear Sciences, Belgrade, Serbia.
J Microsc. 2008 Dec;232(3):539-41. doi: 10.1111/j.1365-2818.2008.02143.x.
Ion beam mixing of Fe/Si bilayers, induced by 100 keV (40)Ar ions at room temperature was investigated. Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were applied for structural characterization. The main focus of this study was on the influence of the substrate structure on interface mixing. The influence of the substrate structure is due to the two classes of irradiated bilayers, Fe thin films deposited on crystalline or pre-amorphized Si substrates. An about 76% higher efficiency of atomic transport across the pre-amorphized Fe/a-Si interface as compared to that of Fe/c-Si bilayers was observed.
研究了室温下100 keV的（40）Ar离子诱导的Fe/Si双层膜的离子束混合。采用卢瑟福背散射光谱（RBS）、原子力显微镜（AFM）、扫描电子显微镜（SEM）和透射电子显微镜（TEM）进行结构表征。本研究的主要重点是衬底结构对界面混合的影响。衬底结构的影响归因于两类辐照双层膜，即沉积在晶体或预非晶化Si衬底上的Fe薄膜。观察到与Fe/c-Si双层膜相比，穿过预非晶化Fe/a-Si界面的原子传输效率高约76%。
