Bratkovsky A M, Osipov V V
Hewlett-Packard Laboratories, 1501 Page Mill Road, 1L, Palo Alto, California 94304, USA.
Phys Rev Lett. 2004 Mar 5;92(9):098302. doi: 10.1103/PhysRevLett.92.098302. Epub 2004 Mar 4.
A new mechanism of magnetoresistance, based on tunneling emission of spin-polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is described. The FM-S-FM structure is considered, which includes very thin heavily doped (delta-doped) layers at FM-S interfaces. At certain parameters the structure is highly sensitive at room temperature to variations of the field with frequencies up to 100 GHz. The current oscillates with the field, and its relative amplitude is determined only by the spin polarizations of FM-S junctions.
描述了一种磁阻的新机制，该机制基于自旋极化电子从铁磁体（FM）隧穿发射到半导体（S）中，以及在外部磁场下半导体层中电子自旋的进动。考虑了FM-S-FM结构，该结构在FM-S界面处包括非常薄的重掺杂（δ掺杂）层。在某些参数下，该结构在室温下对频率高达100 GHz的磁场变化高度敏感。电流随磁场振荡，其相对幅度仅由FM-S结的自旋极化决定。
