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金属介观自旋阀中自旋进动的电学检测。

Electrical detection of spin precession in a metallic mesoscopic spin valve.

作者信息

Jedema F J, Heersche H B, Filip A T, Baselmans J J A, van Wees B J

机构信息

Department of Applied Physics and Materials Science Center, University of Groningen, The Netherlands.

出版信息

Nature. 2002 Apr 18;416(6882):713-6. doi: 10.1038/416713a.

DOI:10.1038/416713a
PMID:11961548
Abstract

To study and control the behaviour of the spins of electrons that are moving through a metal or semiconductor is an outstanding challenge in the field of 'spintronics', where possibilities for new electronic applications based on the spin degree of freedom are currently being explored. Recently, electrical control of spin coherence and coherent spin precession during transport was studied by optical techniques in semiconductors. Here we report controlled spin precession of electrically injected and detected electrons in a diffusive metallic conductor, using tunnel barriers in combination with metallic ferromagnetic electrodes as spin injector and detector. The output voltage of our device is sensitive to the spin degree of freedom only, and its sign can be switched from positive to negative, depending on the relative magnetization of the ferromagnetic electrodes. We show that the spin direction can be controlled by inducing a coherent spin precession caused by an applied perpendicular magnetic field. By inducing an average precession angle of 180 degrees, we are able to reverse the sign of the output voltage.

摘要

在“自旋电子学”领域,研究并控制在金属或半导体中移动的电子自旋行为是一项重大挑战,目前该领域正在探索基于自旋自由度的新型电子应用的可能性。最近,通过光学技术在半导体中研究了输运过程中自旋相干性和相干自旋进动的电控制。在此,我们报告了在扩散金属导体中,利用隧道势垒结合金属铁磁电极作为自旋注入器和探测器,实现了对电注入和检测电子的可控自旋进动。我们器件的输出电压仅对自旋自由度敏感,并且其符号可根据铁磁电极的相对磁化强度从正变为负。我们表明,通过施加垂直磁场诱导相干自旋进动,可以控制自旋方向。通过诱导180度的平均进动角,我们能够反转输出电压的符号。

相似文献

1
Electrical detection of spin precession in a metallic mesoscopic spin valve.金属介观自旋阀中自旋进动的电学检测。
Nature. 2002 Apr 18;416(6882):713-6. doi: 10.1038/416713a.
2
Direct electronic measurement of the spin Hall effect.自旋霍尔效应的直接电子测量。
Nature. 2006 Jul 13;442(7099):176-9. doi: 10.1038/nature04937.
3
Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve.全金属介观自旋阀中室温下的电自旋注入与积累。
Nature. 2001 Mar 15;410(6826):345-8. doi: 10.1038/35066533.
4
Electronic measurement and control of spin transport in silicon.硅中自旋输运的电子测量与控制。
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Coherent spin manipulation without magnetic fields in strained semiconductors.在应变半导体中无需磁场的相干自旋操控。
Nature. 2004 Jan 1;427(6969):50-3. doi: 10.1038/nature02202.
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Giant magnetoresistance in organic spin-valves.有机自旋阀中的巨磁电阻效应
Nature. 2004 Feb 26;427(6977):821-4. doi: 10.1038/nature02325.
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Electrical control of spin coherence in semiconductor nanostructures.半导体纳米结构中自旋相干性的电学控制。
Nature. 2001 Dec 6;414(6864):619-22. doi: 10.1038/414619a.
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Persistent sourcing of coherent spins for multifunctional semiconductor spintronics.为多功能半导体自旋电子学持续获取相干自旋
Nature. 2001 Jun 14;411(6839):770-2. doi: 10.1038/35081014.
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Enhanced magnetic field sensitivity of spin-dependent transport in cluster-assembled metallic nanostructures.团簇组装金属纳米结构中自旋相关输运的增强磁场敏感性。
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Nature. 2007 Aug 2;448(7153):571-4. doi: 10.1038/nature06037. Epub 2007 Jul 15.

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