在同质外延生长过程中，图案化GaAs(001)表面粗糙度的瞬态演变。
Transient evolution of surface roughness on patterned GaAs(001) during homoepitaxial growth.
作者信息
Kan H-C, Shah S, Tadyyon-Eslami T, Phaneuf R J
机构信息
Department of Physics and Department of Materials Science and Engineering, University of Maryland, and Laboratory for Physical Sciences, College Park, Maryland 20740, USA.
出版信息
Phys Rev Lett. 2004 Apr 9;92(14):146101. doi: 10.1103/PhysRevLett.92.146101. Epub 2004 Apr 8.
We have investigated the length scale dependence of the transient evolution of surface roughness during homoepitaxial growth on GaAs(100), patterning the surface lithographically with an array of cylindrical pits of systematically varied sizes and spacings. Our atomic force microscopy measurements show that the amplitude of the surface corrugation has nonmonotonic behavior in both the length scale dependence and time evolution. This behavior allows us to rule out a number of existing continuum models of growth.
我们研究了在GaAs(100)上进行同质外延生长时表面粗糙度瞬态演化的长度尺度依赖性，通过光刻图案化表面，形成一系列尺寸和间距系统变化的圆柱形凹坑阵列。我们的原子力显微镜测量结果表明，表面波纹的幅度在长度尺度依赖性和时间演化方面均呈现非单调行为。这种行为使我们能够排除许多现有的生长连续介质模型。
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