Friesen C, Thompson C V
Department of Materials and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Phys Rev Lett. 2004 Jul 30;93(5):056104. doi: 10.1103/PhysRevLett.93.056104.
Stress evolution during intermittent homoepitaxial growth of (111)-oriented Cu and Ag thin films has been studied. A tensile stress change is observed when growth is stopped, but the change is reversed when growth is resumed. Reflection high energy electron diffraction analysis of the atomic scale surface roughness during intermittent growth demonstrates a strong correlation between the surface structure and reversible stress evolution. The results are discussed in terms of an evolving surface defect population.
