Lin Chuan-Fu, Kan Hung-Chih, Kanakaraju Subramaniam, Richardson Christopher, Phaneuf Raymond
Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, USA.
Laboratory for Physical Science, 8050 Greenmead Drive, College Park, MD 20740, USA.
Nanomaterials (Basel). 2014 May 12;4(2):344-354. doi: 10.3390/nano4020344.
We present results demonstrating directed self-assembly of nanometer-scale mounds during molecular beam epitaxial growth on patterned GaAs (001) surfaces. The mound arrangement is tunable via the growth temperature, with an inverse spacing or spatial frequency which can exceed that of the features of the template. We find that the range of film thickness over which particular mound arrangements persist is finite, due to an evolution of the shape of the mounds which causes their growth to self-limit. A difference in the film thickness at which mounds at different sites self-limit provides a means by which different arrangements can be produced.
我们展示的结果表明，在图案化的GaAs（001）表面进行分子束外延生长期间，纳米级丘状结构会定向自组装。丘状结构的排列可通过生长温度进行调节，其反向间距或空间频率可能超过模板特征的频率。我们发现，由于丘状结构形状的演变导致其生长自我限制，特定丘状结构排列持续存在的膜厚范围是有限的。不同位置的丘状结构自我限制时的膜厚差异提供了一种产生不同排列的方法。
