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光激发半导体中的动态铁磁近邻效应

Dynamic ferromagnetic proximity effect in photoexcited semiconductors.

作者信息

Bauer Gerrit E W, Brataas Arne, Tserkovnyak Yaroslav, Halperin Bertrand I, Zwierzycki Maciej, Kelly Paul J

机构信息

Kavli Institute of NanoScience, Delft University of Technology, 2628 CJ Delft, The Netherlands.

出版信息

Phys Rev Lett. 2004 Mar 26;92(12):126601. doi: 10.1103/PhysRevLett.92.126601. Epub 2004 Mar 22.

Abstract

The spin dynamics of photoexcited carriers in semiconductors in contact with a ferromagnet is treated theoretically and compared with time-dependent Faraday rotation experiments. The long-time response of the system is found to be governed by the first tens of picoseconds in which the excited plasma interacts strongly with the intrinsic interface between the semiconductor and the ferromagnet in spite of the existence of a Schottky barrier in equilibrium.

摘要

从理论上研究了与铁磁体接触的半导体中光激发载流子的自旋动力学,并与随时间变化的法拉第旋转实验进行了比较。发现该系统的长期响应由最初的几十皮秒决定,在此期间,尽管在平衡状态下存在肖特基势垒,但激发的等离子体仍与半导体和铁磁体之间的固有界面强烈相互作用。

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