Ciuti C, McGuire J P, Sham L J
Department of Physics, University of California San Diego, La Jolla 92093-0319, USA.
Phys Rev Lett. 2002 Oct 7;89(15):156601. doi: 10.1103/PhysRevLett.89.156601. Epub 2002 Sep 18.
We present a theory of generation or alteration of the electron spin coherence and population in an n-doped semiconductor by reflection at the interface with a ferromagnet. The dependence of the spin reflection on the Schottky barrier height and the doping concentration in the semiconductor was computed for a generic model. The theory provides an explanation for the spontaneous electron spin coherence and nuclear polarization in the semiconductor interfaced with a ferromagnet and associated phenomena recently observed by time-resolved Faraday rotation experiments. The study also points to an alternative approach to spintronics different from spin injection.
我们提出了一种关于在n型掺杂半导体中，通过与铁磁体界面处的反射来产生或改变电子自旋相干性和布居数的理论。针对一个通用模型，计算了自旋反射对半导体中肖特基势垒高度和掺杂浓度的依赖性。该理论为与铁磁体界面处的半导体中的自发电子自旋相干性和核极化以及最近通过时间分辨法拉第旋转实验观察到的相关现象提供了解释。该研究还指出了一种不同于自旋注入的自旋电子学替代方法。
