Almeida Vilson R, Xu Qianfan, Barrios Carlos A, Lipson Michal
School of Electrical and Computer Engineering, Cornell University, 411 Phillips Hall, Ithaca, New York 14853, USA.
Opt Lett. 2004 Jun 1;29(11):1209-11. doi: 10.1364/ol.29.001209.
We present a novel waveguide geometry for enhancing and confining light in a nanometer-wide low-index material. Light enhancement and confinement is caused by large discontinuity of the electric field at high-index-contrast interfaces. We show that by use of such a structure the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2). This intensity is approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.
我们提出了一种新型波导结构,用于在纳米级宽度的低折射率材料中增强和限制光。光的增强和限制是由高折射率对比度界面处电场的大幅不连续性引起的。我们表明,通过使用这种结构,场可以被限制在一个50纳米宽的低折射率区域,归一化强度为20微米⁻²。该强度比使用传统矩形波导在二氧化硅中所能达到的强度高出约20倍。