Zheng Tianzhe, Gu Yiran, Kwon Hyounghan, Roberts Gregory, Faraon Andrei
T. J. Watson Laboratory of Applied Physics and Kavli Nanoscience Institute, California Institute of Technology, 1200 E. California Blvd., Pasadena, CA, 91125, USA.
Department of Applied Physics and Material Science, California Institute of Technology, 1200 E. California Blvd., Pasadena, CA, 91125, USA.
Nat Commun. 2024 Feb 20;15(1):1557. doi: 10.1038/s41467-024-45544-0.
Active metasurfaces provide the opportunity for fast spatio-temporal control of light. Among various tuning methods, organic electro-optic materials provide some unique advantages due to their fast speed and large nonlinearity, along with the possibility of using fabrication techniques based on infiltration. In this letter, we report a silicon-organic platform where organic electro-optic material is infiltrated into the narrow gaps of slot-mode metasurfaces with high quality factors. The mode confinement into the slot enables the placement of metallic electrodes in close proximity, thus enabling tunability at lower voltages. We demonstrate the maximum tuning sensitivity of 0.16nm/V, the maximum extinction ratio of 38% within ± 17V voltage at telecommunication wavelength. The device has 3dB bandwidth of 3MHz. These results provide a path towards tunable silicon-organic hybrid metasurfaces at CMOS-level voltages.
有源超表面为光的快速时空控制提供了机会。在各种调谐方法中，有机电光材料因其速度快、非线性大以及采用基于渗透的制造技术的可能性而具有一些独特优势。在本信函中，我们报道了一种硅 - 有机平台，其中有机电光材料被渗透到具有高品质因数的狭缝模式超表面的狭窄间隙中。模式被限制在狭缝内使得金属电极能够紧密放置，从而在较低电压下实现可调性。我们展示了在电信波长下，最大调谐灵敏度为0.16nm/V，在±17V电压范围内最大消光比为38%。该器件的3dB带宽为3MHz。这些结果为在CMOS级电压下实现可调谐硅 - 有机混合超表面提供了一条途径。
