Ganichev S D, Bel'kov V V, Golub L E, Ivchenko E L, Schneider Petra, Giglberger S, Eroms J, De Boeck J, Borghs G, Wegscheider W, Weiss D, Prettl W
Fakultät Physik, University of Regensburg, 93040 Regensburg, Germany.
Phys Rev Lett. 2004 Jun 25;92(25 Pt 1):256601. doi: 10.1103/PhysRevLett.92.256601. Epub 2004 Jun 23.
The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron gas (2DEG). This novel technique makes use of the angular distribution of the spin-galvanic effect at certain directions of spin orientation in the plane of a QW. The ratio of the relevant Rashba and Dresselhaus coefficients can be deduced directly from experiment and does not relay on theoretically obtained quantities. Thus our experiments open a new way to determine the different contributions to spin-orbit coupling.
通过对包含二维电子气(2DEG)的n型InAs量子阱(QW)结构进行光电流测量,提取了描述半导体量子阱结构中自旋轨道耦合的Rashba和Dresselhaus项的相对强度。这种新技术利用了量子阱平面内特定自旋取向方向上自旋电流效应的角分布。相关Rashba和Dresselhaus系数的比值可直接从实验中推导得出,而不依赖于理论计算得到的量。因此,我们的实验为确定自旋轨道耦合的不同贡献开辟了一条新途径。