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存在自旋轨道相互作用时二维杂质系统中的自旋霍尔电导率和霍尔角。

Spin-Hall conductivity and Hall angle in a two-dimensional system with impurities in the presence of spin-orbit interactions.

作者信息

Sharma Hemant Kumar, Sil Shreekantha, Chatterjee Ashok

机构信息

School of Physics, University of Hyderabad, Hyderabad, Telangana, India.

Department of Physics, Visva Bharati University, Bolpur, West Bengal, India.

出版信息

Sci Rep. 2022 Aug 20;12(1):14201. doi: 10.1038/s41598-022-18042-w.

Abstract

We investigate the spin-torque-dependent Spin Hall phenomenon in a two-dimensional tight-binding system in the presence of Rashba and Dresselhaus spin-orbit interactions and random static impurities. We employ the Matsubara Green function techniques to calculate the relaxation time caused by the scattering of electrons by impurities. The longitudinal and transverse conductivities are next calculated with the help of the Kubo formalism. We have also calculated the spin Hall angle for the present model and studied its dependence on spin-orbit interactions and impurity strength. Finally, we explore the effect of interplay between the Rashba and Dresselhaus interactions on the spin-Hall effect.

摘要

我们研究了在存在Rashba和Dresselhaus自旋轨道相互作用以及随机静态杂质的二维紧束缚系统中,与自旋扭矩相关的自旋霍尔现象。我们采用松原格林函数技术来计算由杂质对电子的散射所导致的弛豫时间。接下来,借助久保形式理论计算纵向和横向电导率。我们还计算了当前模型的自旋霍尔角,并研究了其对自旋轨道相互作用和杂质强度的依赖性。最后,我们探讨了Rashba和Dresselhaus相互作用之间的相互作用对自旋霍尔效应的影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e182/9392773/406fb75b7a1f/41598_2022_18042_Fig1_HTML.jpg

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