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用于脑磁图/脑电图正向问题的对称边界元法公式

Symmetric BEM formulation for the M/EEG forward problem.

作者信息

Adde Geoffray, Clerc Maureen, Faugeras Olivier, Keriven Renaud, Kybic Jan, Papadopoulo Théodore

机构信息

Odyssée Laboratory - ENPC - ENS Ulm - INRIA - France.

出版信息

Inf Process Med Imaging. 2003 Jul;18:524-35. doi: 10.1007/978-3-540-45087-0_44.

Abstract

The forward M/EEG problem consists in simulating the electric potential and the magnetic field produced outside the head by currents in the brain related to neural activity. All previously proposed solutions using the Boundary Element Method (BEM) were based on a double-layer integral formulation. We have developed an alternative symmetric BEM formulation, achieving a significantly higher accuracy for sources close to tissue interfaces, namely in the cortex. Numerical experiments using a spherical semi-realistic multilayer head model with a known analytical solution are presented, showing that the new BEM performs better than the formulations used in our earlier comparisons, and in most cases outperforms the Finite Element Method (FEM) as far as accuracy is concerned, thus making the BEM a viable choice.

摘要

正向脑磁图/脑电图问题在于模拟与神经活动相关的大脑电流在头部外部产生的电势和磁场。所有先前提出的使用边界元法(BEM)的解决方案都是基于双层积分公式。我们开发了一种替代的对称边界元法公式,对于靠近组织界面(即皮层)的源,其精度显著提高。给出了使用具有已知解析解的球形半真实多层头部模型的数值实验,结果表明新的边界元法比我们早期比较中使用的公式表现更好,并且在大多数情况下,就精度而言优于有限元法(FEM),因此使边界元法成为一个可行的选择。

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