Ricci D A, Miller T, Chiang T-C
Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080, USA.
Phys Rev Lett. 2004 Sep 24;93(13):136801. doi: 10.1103/PhysRevLett.93.136801. Epub 2004 Sep 20.
We report a study of the Schottky barrier for Pb films grown on Si surfaces terminated by various metals (Ag, In, Au, and Pb) to explore the atomic-scale physics of the interface barrier and a means to control the barrier height. Electronic confinement by the Schottky barrier results in quantum well states in the Pb films, which are measured by angle-resolved photoemission. The barrier height is determined from the atomic-layer-resolved energy levels and the line widths. A calculation based on the known interface chemistry and the electronegativity yields predicted barrier heights in good agreement with the experiment.
