Bannani A, Bobisch C A, Matena M, Möller R
Department of Physics, Center for Nanointegration Duisburg-Essen, University of Duisburg-Essen, 47048 Duisburg, Germany.
Nanotechnology. 2008 Sep 17;19(37):375706. doi: 10.1088/0957-4484/19/37/375706. Epub 2008 Aug 5.
In this work we report on ballistic electron emission spectroscopy (BEES) studies on epitaxial layers of silver grown on silicon surfaces, with either a Si(111)-(7 × 7) or Si(100)-(2 × 1) surface reconstruction. The experiments were done at low temperature and in ultra-high vacuum (UHV). In addition, BEES measurements on polycrystalline Ag films grown on hydrogen-terminated H:Si(111)-(1 × 1) and H:Si(100)-(2 × 1) surfaces were performed. The Schottky barrier heights were evaluated by BEES. The results are compared to the values for the barrier height reported for macroscopic Schottky diodes. We show that the barrier heights for the epitaxial films substantially differ from the values measured on polycrystalline Ag films, suggesting a strong effect of the interface on the barrier height.
在这项工作中，我们报告了对生长在具有Si(111)-(7×7)或Si(100)-(2×1)表面重构的硅表面上的银外延层进行的弹道电子发射光谱(BEES)研究。实验在低温和超高真空(UHV)条件下进行。此外，还对生长在氢终止的H:Si(111)-(1×1)和H:Si(100)-(2×1)表面上的多晶银膜进行了BEES测量。通过BEES评估肖特基势垒高度。将结果与宏观肖特基二极管报道的势垒高度值进行比较。我们表明，外延膜的势垒高度与多晶银膜上测量的值有很大不同，这表明界面势垒高度有很强的影响。
