Xu Qiaobing, Mayers Brian T, Lahav Michal, Vezenov Dmitri V, Whitesides George M
Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, USA.
J Am Chem Soc. 2005 Jan 26;127(3):854-5. doi: 10.1021/ja043436d.
This report presents a simple and convenient method to generate nanoscale fractures (cracks) in smooth, single-crystalline Si substrates. The cracks propagated as approximately straight lines along the {100} crystal planes with controllable length defined by a stabilizing backlayer. Close to its tip, the crack presented a vertical offset of the two planes as step of smoothly decreasing height, ranging from the microscale to the atomic scale. The edges of a crack were in close contact at the tip of the crack but were separated at the edge where the crack was initiated. These steps served as ideal test features for probing the limits of the replication of soft lithography. Analysis of topography of original and replicated features (in "hard" poly(dimethylsiloxane and polyurethane) by atomic force microscopy demonstrated that steps down to 0.4 nm could be reproduced; these features approach the dimensions of atoms.
本报告介绍了一种在光滑的单晶硅衬底上产生纳米级裂缝(裂纹)的简单便捷方法。裂纹沿着{100}晶面以近似直线的方式扩展,其长度可通过稳定的背层进行控制。在裂纹尖端附近,裂纹呈现出两个平面的垂直偏移,形成高度平滑递减的台阶,范围从微观尺度到原子尺度。裂纹边缘在裂纹尖端紧密接触,但在裂纹起始的边缘处分离。这些台阶是探测软光刻复制极限的理想测试特征。通过原子力显微镜对原始特征和复制特征(在“硬”聚二甲基硅氧烷和聚氨酯中)的形貌分析表明,低至0.4纳米的台阶都可以被复制;这些特征接近原子尺寸。