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使用原子力显微镜在硅上对烷基单分子层进行纳米级图案化。

Nanoscale patterning of alkyl monolayers on silicon using the atomic force microscope.

作者信息

Headrick Jill E, Armstrong Matt, Cratty Justin, Hammond Stephanie, Sheriff Bonnie A, Berrie Cindy L

机构信息

Department of Chemistry, University of Kansas, Lawrence, KS 66045-7582, USA.

出版信息

Langmuir. 2005 Apr 26;21(9):4117-22. doi: 10.1021/la0481905.

Abstract

Self-assembled monolayers (SAMs) of 1-alkenes on hydrogen-passivated silicon substrates were successfully patterned on the nanometer scale using an atomic force microscope (AFM) probe tip. Nanoshaving experiments on alkyl monolayers formed on H-Si(111) not only demonstrate the flexibility of this technique but also show that patterning with an AFM probe is a viable method for creating well-defined, nanoscale features in a monolayer matrix in a reproducible and controlled manner. Features of varying depths (2-15 nm) were created in the alkyl monolayers by controlling the applied load and the number of etching scans made at high applied loads. The patterning on these SAM films is compared with the patterning of alkyl siloxane monolayers on silicon and mica.

摘要

利用原子力显微镜(AFM)探针尖端,成功地在氢钝化硅衬底上对1-烯烃的自组装单分子层(SAMs)进行了纳米级图案化。对在H-Si(111)上形成的烷基单分子层进行的纳米刮削实验,不仅证明了该技术的灵活性,还表明用AFM探针进行图案化是一种以可重复和可控方式在单分子层基质中创建明确的纳米级特征的可行方法。通过控制施加的负载以及在高负载下进行的蚀刻扫描次数,在烷基单分子层中创建了不同深度(2-15纳米)的特征。将这些SAM薄膜上的图案化与硅和云母上的烷基硅氧烷单分子层的图案化进行了比较。

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