Ohtake Akihiro, Kocán Pavel, Seino Kaori, Schmidt Wolf G, Koguchi Nobuyuki
National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan.
Phys Rev Lett. 2004 Dec 31;93(26 Pt 1):266101. doi: 10.1103/PhysRevLett.93.266101. Epub 2004 Dec 20.
The Ga-rich reconstruction of the GaAs(001) surface has been studied. Using scanning tunneling microscopy (STM), we have found the existence of a well-ordered (4 x 6) reconstruction under extreme Ga-rich conditions. A structure model, consisting of subsurface Ga-Ga dimers and surface Ga-As dimers, is proposed for the (4 x 6) surface. This model is found to be energetically favorable at the Ga-rich limit and agrees well with our experimental data from STM and reflection high-energy electron diffraction.
对砷化镓（001）表面富镓重构进行了研究。利用扫描隧道显微镜（STM），我们发现在极端富镓条件下存在一种有序的（4×6）重构。针对（4×6）表面提出了一种由亚表面镓-镓二聚体和表面镓-砷二聚体组成的结构模型。发现该模型在富镓极限下在能量上是有利的，并且与我们从STM和反射高能电子衍射得到的实验数据非常吻合。
