Ando Yoichi, Komiya Seiki, Segawa Kouji, Ono S, Kurita Y
Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511, Japan.
Phys Rev Lett. 2004 Dec 31;93(26 Pt 1):267001. doi: 10.1103/PhysRevLett.93.267001. Epub 2004 Dec 20.
We propose that resistivity curvature mapping (RCM) based on the in-plane resistivity data is a useful way to objectively draw electronic phase diagrams of high-Tc cuprates, where various crossovers are important. In particular, the pseudogap crossover line can be conveniently determined by RCM. We show experimental phase diagrams obtained by RCM for Bi2Sr2-zLazCuO6+delta, La2-xSrxCuO4, and YBa2Cu3Oy, and demonstrate the universal nature of the pseudogap crossover. Intriguingly, the electronic crossover near optimum doping depicted by RCM appears to occur rather abruptly, suggesting that the quantum-critical regime, if it exists, must be very narrow.
我们提出,基于面内电阻率数据的电阻率曲率映射(RCM)是客观绘制高温铜酸盐电子相图的一种有用方法,其中各种交叉点很重要。特别是,赝能隙交叉线可以通过RCM方便地确定。我们展示了通过RCM获得的Bi2Sr2-zLazCuO6+δ、La2-xSrxCuO4和YBa2Cu3Oy的实验相图,并证明了赝能隙交叉的普遍性。有趣的是,RCM描绘的接近最佳掺杂时的电子交叉似乎相当突然地发生,这表明量子临界区(如果存在的话)一定非常狭窄。