作为铜金属原子层沉积（ALD）前驱体的脒基铜（I）的合成与表征。

Synthesis and characterization of copper(I) amidinates as precursors for atomic layer deposition (ALD) of copper metal.

作者信息

Li Zhengwen, Barry Seán T, Gordon Roy G

机构信息

Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA.

出版信息

Inorg Chem. 2005 Mar 21;44(6):1728-35. doi: 10.1021/ic048492u.

DOI:10.1021/ic048492u

PMID:15762699

Abstract

A series of copper(I) amidinates of the general type (R'NC(R)NR'')Cu (R' and R'' = n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl; R = methyl, n-butyl) have been synthesized and characterized. These compounds are planar dimers, bridged by nearly linear N-Cu-N bonds. Their properties (volatility, low melting point, high thermal stability, and self-limited surface reactivity) are well-suited for atomic layer deposition (ALD) of copper metal films that are pure, highly conductive, conformal, and strongly adherent to substrates.

摘要

已合成并表征了一系列通式为(R'NC(R)NR'')Cu的铜（I）脒基化合物（R'和R'' = 正丙基、异丙基、正丁基、异丁基、仲丁基、叔丁基；R = 甲基、正丁基）。这些化合物为平面二聚体，由近乎线性的N-Cu-N键桥连。它们的性质（挥发性、低熔点、高热稳定性和自限性表面反应性）非常适合用于原子层沉积（ALD）纯的、高导电性、保形且与衬底紧密附着的铜金属膜。