铜金属薄膜的低温原子层沉积：二甲基氨基-2-丙醇铜与二乙基锌的自限性表面反应

Low-temperature atomic layer deposition of copper metal thin films: self-limiting surface reaction of copper dimethylamino-2-propoxide with diethylzinc.

作者信息

Lee Byoung H, Hwang Jae K, Nam Jae W, Lee Song U, Kim Jun T, Koo Sang-M, Baunemann A, Fischer Roland A, Sung Myung M

机构信息

Department of Chemistry, Hanyang University, Seoul 133-791, Korea.

出版信息

Angew Chem Int Ed Engl. 2009;48(25):4536-9. doi: 10.1002/anie.200900414.

DOI:10.1002/anie.200900414

PMID:19444843

Abstract

A uniform, conformal, pure copper metal thin film was grown at very low substrate temperatures (100-120 degrees C) on Si(100) substrates by atomic layer deposition involving the ligand exchange of [Cu(OCHMeCH(2)NMe(2))(2)] with Et(2)Zn (see scheme). Patterned copper thin films of Cu nanotubes (diameter 150 nm, length 12 microm) were fabricated.

摘要

通过涉及[Cu(OCHMeCH(2)NMe(2))(2)]与Et(2)Zn配体交换的原子层沉积方法，在非常低的衬底温度（100 - 120摄氏度）下，在Si(100)衬底上生长出均匀、保形的纯铜金属薄膜（见示意图）。制备了直径为150纳米、长度为12微米的铜纳米管图案化铜薄膜。