Madajska Katarzyna, Szymańska Iwona Barbara
Department of Chemistry, Nicolaus Copernicus University in Toruń, Gagarina 7, 87-100 Toruń, Poland.
Materials (Basel). 2021 Jun 8;14(12):3145. doi: 10.3390/ma14123145.
In the present study, we have synthesised and characterised newly copper(II) complexes with the general formula [Cu(NH(NH=)CCF)(µ-OCR)], where R = CF, CF, CF, CF. Infrared spectroscopy, mass spectrometry with electron ionisation (EI MS), and density-functional theory (DFT) calculations were used to confirm compounds' composition and structure. The volatility of the compounds was studied using thermal analysis (TGA), EI MS mass spectrometry, variable temperature infrared spectroscopy (VT IR), and sublimation experiments. Research has revealed that these compounds are the source of metal carriers in the gas phase. The thermal decomposition mechanism over reduced pressure was proposed. TGA studies demonstrated that copper transfer to the gaseous phase occurs even at atmospheric pressure. Two selected complexes [Cu(NH(NH=)CCF)(µ-OCCF)] and [Cu(NH(NH=)CCF)(µ-OCCF)] were successful used as chemical vapour deposition precursors. Copper films were deposited with an evaporation temperature of 393 K and 453 K, respectively, and a decomposition temperature in the range of 573-633 K without the use of hydrogen. The microscopic observations made to investigate the interaction of the [Cu(NH(NH=)CCF)(µ-OCCF)] with the electron beam showed that the ligands are completely lost under transmission electron microscopy analysis conditions (200 keV), and the final product is copper(II) fluoride. In contrast, the beam energy in scanning electron microscopy (20 keV) was insufficient to break all coordination bonds. It was shown that the Cu-O bond is more sensitive to the electron beam than the Cu-N bond.
在本研究中,我们合成并表征了通式为[Cu(NH(NH=)CCF)(µ - OCR)]的新型铜(II)配合物,其中R = CF、CF、CF、CF。利用红外光谱、电子电离质谱(EI MS)和密度泛函理论(DFT)计算来确定化合物的组成和结构。通过热分析(TGA)、EI MS质谱、变温红外光谱(VT IR)和升华实验研究了化合物的挥发性。研究表明,这些化合物是气相中金属载体的来源。提出了减压下的热分解机理。TGA研究表明,即使在大气压下铜也会转移到气相中。两种选定的配合物[Cu(NH(NH=)CCF)(µ - OCCF)]和[Cu(NH(NH=)CCF)(µ - OCCF)]成功用作化学气相沉积前驱体。分别在蒸发温度为393 K和453 K、分解温度在573 - 633 K的条件下沉积铜膜,且无需使用氢气。为研究[Cu(NH(NH=)CCF)(µ - OCCF)]与电子束的相互作用而进行的微观观察表明,在透射电子显微镜分析条件(200 keV)下配体完全损失,最终产物是氟化铜(II)。相比之下,扫描电子显微镜中的束能量(20 keV)不足以打破所有配位键。结果表明,Cu - O键比Cu - N键对电子束更敏感。