Han Song, Liu Xiaolei, Zhou Chongwu
Department of Electrical Engineering-Electrophysics, University of Southern California, Los Angeles, California 90089, USA.
J Am Chem Soc. 2005 Apr 20;127(15):5294-5. doi: 10.1021/ja042544x.
We report high-throughput growth of highly aligned single-walled carbon nanotube arrays on a-plane and r-plane sapphire substrates. This is achieved using chemical vapor deposition with ferritin as the catalyst. The nanotubes are aligned normal to the [0001] direction for growth on the a-plane sapphire. They are typically tens of micrometers long, with a narrow diameter distribution of 1.34 +/- 0.30 nm. In contrast, no orientation was achieved for growth on the c-plane and m-plane sapphire, or when Fe films, instead of ferritin, were used as the catalyst. Such orientation control is likely related to the interaction between carbon nanotubes and the sapphire substrate, which is supported by the observation that when a second layer of nanotubes was grown, they followed the gas flow direction. These aligned nanotube arrays may enable the construction of integrable and scalable nanotube devices and systems.
我们报道了在a面和r面蓝宝石衬底上高通量生长高度取向的单壁碳纳米管阵列。这是通过以铁蛋白为催化剂的化学气相沉积实现的。纳米管在a面蓝宝石上生长时垂直于[0001]方向取向。它们通常长几十微米，直径分布狭窄，为1.34±0.30纳米。相比之下，在c面和m面蓝宝石上生长时，或者当使用铁膜而不是铁蛋白作为催化剂时，没有实现取向。这种取向控制可能与碳纳米管和蓝宝石衬底之间的相互作用有关，这一观点得到了如下观察结果的支持：当生长第二层纳米管时，它们遵循气流方向。这些取向的纳米管阵列可能有助于构建可集成和可扩展的纳米管器件及系统。
