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在平坦衬底上生长毫米长且水平排列的单壁碳纳米管。

Growth of millimeter-long and horizontally aligned single-walled carbon nanotubes on flat substrates.

作者信息

Huang Shaoming, Cai Xinyu, Liu Jie

机构信息

Chemistry Department, Duke University, Durham, North Carolina 27708, USA.

出版信息

J Am Chem Soc. 2003 May 14;125(19):5636-7. doi: 10.1021/ja034475c.

Abstract

Millimeter-long and well-aligned single-walled carbon nanotubes (SWNTs) have been produced on silica/silicon surfaces using the carbon monoxide chemical vapor deposition (CO-CVD) method. The orientation of the nanotube arrays can be well-controlled by the gas flow during the growth. The majority of the orientated SWNTs are straight and individual. The length of the nanotubes can be >2 mm for a 10 min growth. Furthermore, multidimensional crossed-networks of SWNT can be easily generated by multistep processes. These results present a great opportunity in the controllable production of organized SWNT arrays for large-scale carbon nanotube-based nanodevice fabrication.

摘要

利用一氧化碳化学气相沉积(CO-CVD)法,在二氧化硅/硅表面制备出了毫米长且排列良好的单壁碳纳米管(SWNTs)。在生长过程中,通过气流可很好地控制纳米管阵列的取向。大多数取向的单壁碳纳米管是直的且独立存在。对于10分钟的生长时间,纳米管的长度可以大于2毫米。此外,通过多步工艺可以轻松生成单壁碳纳米管的多维交叉网络。这些结果为大规模基于碳纳米管的纳米器件制造中可控生产有序单壁碳纳米管阵列提供了巨大机遇。

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