Coşkun Mustafa, Ombaba Matthew M, Dumludağ Fatih, Altındal Ahmet, Islam M Saif
Faculty of Engineering and Natural Sciences, Department of Engineering Physics, Istanbul Medeniyet University 34700 Üskudar Istanbul Turkey.
Department of Physics, Marmara University 34722 Kadıköy Istanbul Turkey.
RSC Adv. 2018 Mar 14;8(19):10294-10301. doi: 10.1039/c7ra11987a. eCollection 2018 Mar 13.
In this study, indium-tin-zinc-oxide (ITZO) and Zn doped InO nanowires were directly grown as bridged nanowires between two heavily doped silicon (Si) electrodes on an SOI wafer using single step vapor-solid-solid (VSS) growth method. SEM analysis showed highly dense and self aligned nanowire formation between the Si electrodes. Electrical and UV response measurements were performed in ambient condition. Current-voltage characteristics of devices exhibited both linear and non-linear behavior. This was the first demonstration of bridged ITZO and Zn-doped InO nanowires. Our results show that bridged nanowire growth technique can be a potential candidate for high performance electronic and optoelectronic devices.
在本研究中，采用单步气-固-固（VSS）生长法，在绝缘体上硅（SOI）晶圆上的两个重掺杂硅（Si）电极之间直接生长铟锡锌氧化物（ITZO）和锌掺杂氧化铟纳米线作为桥接纳米线。扫描电子显微镜（SEM）分析表明，硅电极之间形成了高密度且自对准的纳米线。在环境条件下进行了电学和紫外响应测量。器件的电流-电压特性呈现出线性和非线性行为。这是桥接ITZO和锌掺杂氧化铟纳米线的首次展示。我们的结果表明，桥接纳米线生长技术可能是高性能电子和光电器件的潜在候选技术。
