Liu Yuxin, Cui Tianhong
Institute for Micromanufacturing, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, USA.
J Nanosci Nanotechnol. 2005 Feb;5(2):192-7. doi: 10.1166/jnn.2005.038.
Metal oxide semiconductor (MOS) capacitors were fabricated by electrostatic layer-by-layer self-assembly (LbL-SA) combined with a modified lift-off technique. The MOS capacitors were built on both n-type and p-type silicon substrates. The numbers of silicon dioxide (SiO2) nanoparticle layers were varied to characterize the electrical performance of MOS capacitors. Unlike the conventional process, LbL-SA allows us to deposit the thin films for a semiconductor device with a lower temperature, lower cost, and shorter processing time. The stability of the silica insulation layers was also investigated. Atomic force microscopy (AFM) served to monitor the film quality of the self-assembled thin films.
金属氧化物半导体（MOS）电容器是通过静电逐层自组装（LbL-SA）结合改进的剥离技术制造的。MOS电容器构建在n型和p型硅衬底上。改变二氧化硅（SiO2）纳米颗粒层的数量以表征MOS电容器的电学性能。与传统工艺不同，LbL-SA使我们能够以更低的温度、更低的成本和更短的处理时间为半导体器件沉积薄膜。还研究了二氧化硅绝缘层的稳定性。原子力显微镜（AFM）用于监测自组装薄膜的膜质量。
