Matsui Jun, Yoshida Shinsuke, Mikayama Takeshi, Aoki Atsushi, Miyashita Tokuji
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan.
Langmuir. 2005 Jun 7;21(12):5343-8. doi: 10.1021/la046922n.
Semiconducting thin films consisting of regioregular poly(3-hexylthiophene) (RR-PHT) and poly(N-dodecylacrylamide) (pDDA) were constructed by the Langmuir-Blodgett (LB) technique. A mixture of RR-PHT and pDDA spread from a chloroform solution on a water surface forms a stable monolayer, which can be transferred onto solid substrates by the LB method, yielding a well-defined polymer LB film. Surface morphology studies of the LB film indicate that the RR-PHT is dispersed uniformly throughout the surface. The polymer thin film was chemically doped by contacting with FeCl3 acetonitrile solution, and a conductivity of 5.6 S/cm was achieved. Further, the LB film was utilized as the semiconducting film in the field-effect transistor (FET), and mobilities of 2.2 x 10(-4) and 4.4 x 10(-4) cm2 V(-1) s(-1) were obtained by analyzing the saturated and linear regions of the current-voltage characteristic, respectively.
通过朗缪尔-布洛杰特（LB）技术制备了由区域规整的聚（3-己基噻吩）（RR-PHT）和聚（N-十二烷基丙烯酰胺）（pDDA）组成的半导体薄膜。RR-PHT和pDDA的混合物从氯仿溶液铺展在水面上形成稳定的单分子层，该单分子层可通过LB方法转移到固体基板上，从而得到结构明确的聚合物LB薄膜。LB薄膜的表面形态研究表明，RR-PHT均匀地分散在整个表面。通过与FeCl3乙腈溶液接触对聚合物薄膜进行化学掺杂，实现了5.6 S/cm的电导率。此外，该LB薄膜被用作场效应晶体管（FET）中的半导体薄膜，通过分别分析电流-电压特性的饱和区和线性区，得到了2.2×10⁻⁴和4.4×10⁻⁴ cm² V⁻¹ s⁻¹的迁移率。
