采用聚（偏二氟乙烯）/聚（噻吩）共混纳米片制备的电阻式非易失性存储器。
Resistive non-volatile memories fabricated with poly(vinylidene fluoride)/poly(thiophene) blend nanosheets.
作者信息
Zhu Huie, Yamamoto Shunsuke, Matsui Jun, Miyashita Tokuji, Mitsuishi Masaya
机构信息
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University 2-1-1 Katahira, Aoba-ku Sendai 980-8577 Japan
Department of Material and Biological Chemistry, Faculty of Science, Yamagata University 1-4-12 Kojirakawamachi Yamagata 990-8560 Japan.
出版信息
RSC Adv. 2018 Feb 20;8(15):7963-7968. doi: 10.1039/c8ra01143e. eCollection 2018 Feb 19.
Ferroelectric poly(vinylidene fluoride)/semiconductive polythiophene (P3CPenT) blend monolayers were developed at varying blend ratios using the Langmuir-Blodgett technique. The multilayered blend nanosheets show much improved surface roughness that is more applicable for electronics applications than spin-cast films. Because of the precisely controllable bottom-up construction, semiconductive P3CPenT were well dispersed into the ferroelectric PVDF matrix. Moreover, the ferroelectric matrix contains almost 100% β crystals: a polar crystal phase responsible for the ferroelectricity of PVDF. Both the good dispersion of semiconductive P3CPenT and the outstanding ferroelectricity of the PVDF matrix in the blend nanosheets guaranteed the success of ferroelectric organic non-volatile memories based on ferroelectricity-manipulated resistive switching with a fresh high ON/OFF ratio and long endurance to 30 days.
采用朗缪尔-布洛杰特技术，以不同的混合比例制备了铁电聚偏二氟乙烯/半导体聚噻吩（P3CPenT）混合单分子层。多层混合纳米片的表面粗糙度有了很大改善，比旋涂薄膜更适用于电子应用。由于采用了精确可控的自下而上构建方法，半导体P3CPenT能够很好地分散在铁电PVDF基体中。此外，铁电基体几乎包含100%的β晶体：一种负责PVDF铁电性的极性晶相。半导体P3CPenT在混合纳米片中的良好分散以及PVDF基体出色的铁电性，保证了基于铁电操纵电阻开关且具有全新高开关比和长达30天耐久性的铁电有机非易失性存储器的成功制备。
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