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利用电子束诱导沉积在二氧化硅衬底上生长钨纳米枝晶。

Growth of tungsten nanodendrites on SiO2 substrate using electron-beam-induced deposition.

作者信息

Xie Guoqiang, Song Minghui, Mitsuishi Kazutaka, Furuya Kazuo

机构信息

High Voltage Electron Microscopy Station, National Institute for Materials Science, 3-13 Sakura, Tsukuba 305-0003, Japan.

出版信息

J Nanosci Nanotechnol. 2005 Apr;5(4):615-9. doi: 10.1166/jnn.2005.075.

Abstract

Tungsten nanodendrite structures were fabricated on an insulator SiO2 substrate using an electron-beam-induced deposition process in a high voltage transmission electron microscope. The effect of electron beam accelerating voltage on the nanodendrite structures was investigated. The morphologies and their growth rates did not have obvious difference for the deposition at accelerating voltages from 400 to 1000 kV. A mechanism for the growth and morphology of the nanodendrite structure was proposed involving charge-up produced on the surface of the substrate, movement of charges to and accumulation at the convex surface of the substrate and the tips of the deposits. High-energy electron irradiation enhanced diffusion of W atoms in the nanodendrites, promoted crystallization of W grains, so that more crystallized W nanodendrite structures were achieved by the electron-beam-induced deposition process using higher energy electron beams.

摘要

利用高压透射电子显微镜中的电子束诱导沉积工艺,在绝缘体二氧化硅(SiO₂)衬底上制备了钨纳米枝晶结构。研究了电子束加速电压对纳米枝晶结构的影响。对于400至1000 kV加速电压下的沉积,其形态及其生长速率没有明显差异。提出了一种纳米枝晶结构生长和形态的机制,该机制涉及在衬底表面产生的电荷积累、电荷向衬底凸面和沉积物尖端的移动和积累。高能电子辐照增强了W原子在纳米枝晶中的扩散,促进了W晶粒的结晶,从而通过使用更高能量电子束的电子束诱导沉积工艺获得了更多结晶的W纳米枝晶结构。

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