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嵌入二氧化硅玻璃中的III-V族半导体砷化铟纳米晶体的溶胶-凝胶合成及光致发光

Sol-gel synthesis and photoluminescence of III-V semiconductor InAs nanocrystals embedded in silica glasses.

作者信息

Yang Heqing, Yao Xi, Huang Daming, Wang Xingjun, Shi Hua Zhong, Zhang Banglao, Liu Shouxin, Fang Yu

机构信息

School of Chemistry & Materials Science, Shaanxi Normal University, Xi'an 710062, China.

出版信息

J Nanosci Nanotechnol. 2005 May;5(5):786-9. doi: 10.1166/jnn.2005.100.

DOI:10.1166/jnn.2005.100
PMID:16010940
Abstract

III-V semiconductor nanocrystals rarely exist as spherical inclusions inside glasses, due to the difficulties during their preparation, such as high toxic reagents or fast oxidation under usual glass technology temperatures. In this paper a sol-gel method for synthesis of InAs nanocrystals embedded in silica glasses was described. Gels were synthesized by the hydrolysis of a complex solution of Si(OC2H5)4, InCl3 x 4H2O, and As2O3. The gels were then heated at 200-450 degrees C in the presence of H2 gas to form fine cubic InAs crystallites. The X-ray diffraction patterns showed four strong peaks from InAs. The Raman spectrum showed InAs longitudinal-optic (233 cm(-1)) and transverseoptic modes (215 cm-(-1)). The size of InAs nanocrystals was found to be from 5 to 30 nm in diameter by transmission electron microscopy. A strong room temperature photoluminescence with peaks at 601 and 697 nm was observed from InAs nanocrystals embedded in silica glasses. The results suggest that it might be possible to synthesize other III-V semiconductor nanocrystals embedded in silica glasses through the sol-gel process.

摘要

III-V族半导体纳米晶体很少以球形包裹体的形式存在于玻璃内部,这是由于其制备过程中存在困难,例如使用高毒性试剂或在常规玻璃工艺温度下快速氧化。本文描述了一种用于合成嵌入二氧化硅玻璃中的砷化铟纳米晶体的溶胶-凝胶法。通过水解四乙氧基硅烷(Si(OC2H5)4)、四水合氯化铟(InCl3·4H2O)和三氧化二砷(As2O3)的复合溶液来合成凝胶。然后将凝胶在氢气存在下于200 - 450摄氏度加热,以形成细小的立方砷化铟微晶。X射线衍射图谱显示出砷化铟的四个强峰。拉曼光谱显示出砷化铟的纵向光学模式(233 cm(-1))和横向光学模式(215 cm(-1))。通过透射电子显微镜发现砷化铟纳米晶体的直径为5至30纳米。从嵌入二氧化硅玻璃中的砷化铟纳米晶体观察到在601和697纳米处有峰的强室温光致发光。结果表明,通过溶胶-凝胶法有可能合成嵌入二氧化硅玻璃中的其他III-V族半导体纳米晶体。

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