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利用电子背散射衍射测量和绘制晶体取向的微小变化。

Measurement and mapping of small changes of crystal orientation by electron backscattering diffraction.

作者信息

Tao Xiaodong, Eades Alwyn

机构信息

Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA 18015-3198, USA.

出版信息

Microsc Microanal. 2005 Aug;11(4):341-53. doi: 10.1017/S1431927605050270.

Abstract

We have explored the possibility of measuring small changes of orientation within grains by electron backscattering diffraction (EBSD), in the scanning electron microscope. Conventional orientation maps (using EBSD) index the orientation of each position on the sample separately. This does not give accurate results for small differences of orientation. We have studied methods of measuring small changes in orientation by measuring the change from one EBSD pattern to the next directly, without indexing either. Previous workers have measured the change of position of a zone axis in the EBSD pattern. We have compared this with an alternative method, which we show to be superior, of measuring the shift of the peaks in the Hough transform from one diffraction pattern to the next. This means that we are measuring the change of orientation of sets of crystal planes within the grain, rather than measuring the change of orientation of zone axes. We show that it is possible, with a standard EBSD configuration, to measure the shift of the Kikuchi bands to a precision of about a 10th of a pixel, which corresponds to a change of orientation in the sample of about 0.1 mrad (0.006 degrees ).

摘要

我们已经探讨了在扫描电子显微镜中利用电子背散射衍射(EBSD)测量晶粒内取向微小变化的可能性。传统的取向图(使用EBSD)分别对样品上每个位置的取向进行索引。对于微小的取向差异,这样无法得出准确结果。我们研究了通过直接测量从一个EBSD图案到下一个图案的变化来测量取向微小变化的方法,而无需进行索引。之前的研究人员测量了EBSD图案中晶带轴位置的变化。我们将其与另一种方法进行了比较,结果表明我们所采用的从一个衍射图案到下一个衍射图案测量霍夫变换中峰值位移的方法更优。这意味着我们测量的是晶粒内晶面组的取向变化,而不是晶带轴的取向变化。我们表明,采用标准的EBSD配置,可以将菊池带的位移测量到约十分之一个像素的精度,这对应于样品中约0.1毫弧度(0.006度)的取向变化。

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