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一种在电子背散射衍射图谱中定位奇库蒂奇带的新方法。

A new method for locating Kikuchi bands in electron backscatter diffraction patterns.

机构信息

The State Key Lab of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, China.

CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, China.

出版信息

Microsc Res Tech. 2019 Dec;82(12):2035-2041. doi: 10.1002/jemt.23373. Epub 2019 Sep 5.

DOI:10.1002/jemt.23373
PMID:31489734
Abstract

Electron backscatter diffraction (EBSD) device can provide crystal structure, orientation, and phase content data through analysis of EBSD patterns. The reliability and precision of these data depend on the quality of the band position and zone axes data. This study introduces a new image processing method that can accurately provide the location of Kikuchi bands and poles. In this method, pattern rotation and gray gradient calculation are employed after for the initial detection of Kikuchi lines. Hough transform and Gaussian function are used for the final definition of bands position. Based on the position of Kikuchi bands, the indices of lattice planes and zone axes can be obtained precisely and easily. Angles between zone axes are calculated using locating results. The maximum error for a single-crystal silicon sample is only 8.07%, illustrating the accuracy of this new method.

摘要

电子背散射衍射(EBSD)设备可以通过分析 EBSD 花样提供晶体结构、取向和相含量数据。这些数据的可靠性和精度取决于晶带位置和晶带轴数据的质量。本研究介绍了一种新的图像处理方法,可以准确地提供菊池带和极点的位置。在该方法中,在菊池线的初始检测之后采用图案旋转和灰度梯度计算,最后使用霍夫变换和高斯函数来定义带的位置。基于菊池带的位置,可以精确和容易地获得晶格面和晶带轴的指数。通过定位结果计算晶带轴之间的角度。对于单晶硅样品,最大误差仅为 8.07%,表明了该新方法的准确性。

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