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表面扩散:纳米管生长的低活化能路径。

Surface diffusion: the low activation energy path for nanotube growth.

作者信息

Hofmann S, Csányi G, Ferrari A C, Payne M C, Robertson J

机构信息

Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, United Kingdom.

出版信息

Phys Rev Lett. 2005 Jul 15;95(3):036101. doi: 10.1103/PhysRevLett.95.036101. Epub 2005 Jul 12.

Abstract

We present the temperature dependence of the growth rate of carbon nanofibers by plasma-enhanced chemical vapor deposition with Ni, Co, and Fe catalysts. We extrapolate a common low activation energy of 0.23-0.4 eV, much lower than for thermal deposition. The carbon diffusion on the catalyst surface and the stability of the precursor molecules, C2H2 or CH4, are investigated by ab initio plane wave density functional calculations. We find a low activation energy of 0.4 eV for carbon surface diffusion on Ni and Co (111) planes, much lower than for bulk diffusion. The energy barrier for C2H2 and CH4 dissociation is at least 1.3 eV and 0.9 eV, respectively, on Ni(111) planes or step edges. Hence, the rate-limiting step for plasma-enhanced growth is carbon diffusion on the catalyst surface, while an extra barrier is present for thermal growth due to gas decomposition.

摘要

我们展示了通过使用镍、钴和铁催化剂的等离子体增强化学气相沉积法生长碳纳米纤维的速率与温度的关系。我们推断出一个常见的低活化能为0.23 - 0.4电子伏特,远低于热沉积的活化能。通过从头算平面波密度泛函计算研究了碳在催化剂表面的扩散以及前驱体分子C₂H₂或CH₄的稳定性。我们发现碳在镍和钴(111)平面上表面扩散的活化能为0.4电子伏特,远低于体扩散的活化能。在镍(111)平面或台阶边缘上,C₂H₂和CH₄解离的能垒分别至少为1.3电子伏特和0.9电子伏特。因此,等离子体增强生长的速率限制步骤是碳在催化剂表面的扩散,而热生长由于气体分解存在额外的能垒。

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