Wrobel Günter, Seifert Reinhard, Ingebrandt Sven, Enderlein Jörg, Ecken Holger, Baumann Arnd, Kaupp U Benjamin, Offenhäusser Andreas
Institute of Thin Films and Interfaces (ISG2) and Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, D-52425 Jülich, Germany.
Biophys J. 2005 Nov;89(5):3628-38. doi: 10.1529/biophysj.104.049809. Epub 2005 Aug 12.
Microelectronic-based biosensors that allow noninvasive measurement of cell activity are in the focus of current developments, however, the mechanisms underlying the cell-transistor coupling are not completely understood. In particular, characteristic properties of the extracellular voltage response such as the waveform and amplitude are not satisfactorily described by electrical circuit models. Here we examine the electrical coupling between a nonmetallized field-effect transistor (FET) and a cell line expressing a voltage-gated EAG K+ channel. The activation kinetics of this channel depends on the voltage pulse protocol and extracellular divalent cations. This feature allows testing, whether the extracellular voltage signal recorded with the FET faithfully tracks the current simultaneously recorded with the patch-clamp technique. We find that the FET signals contain different kinetic components that cannot be entirely explained by equivalent electrical-circuit models. Rather, we suggest that changes in ion concentration in the small cleft between cell and FET may change the surface potential of the FET. This study provides evidence that the electrochemical processes at the cell-transistor interface are complex and that at least two different mechanisms contribute to the shape and amplitude of transistor signals.
基于微电子的生物传感器能够实现对细胞活性的无创测量,目前正处于研发热点,但细胞与晶体管耦合的潜在机制尚未完全明确。特别是,细胞外电压响应的特征属性,如波形和幅度,尚未能通过电路模型得到令人满意的描述。在此,我们研究了一种未金属化的场效应晶体管(FET)与表达电压门控EAG钾通道的细胞系之间的电耦合。该通道的激活动力学取决于电压脉冲协议和细胞外二价阳离子。这一特性使得我们能够测试,通过FET记录的细胞外电压信号是否能如实地追踪同时用膜片钳技术记录的电流。我们发现,FET信号包含不同的动力学成分,这些成分无法完全用等效电路模型来解释。相反,我们认为细胞与FET之间狭小间隙中的离子浓度变化可能会改变FET的表面电位。这项研究表明,细胞-晶体管界面处的电化学过程十分复杂,至少有两种不同机制对晶体管信号的形状和幅度产生影响。