Dinh Van An, Katayama-Yoshida Hiroshi
Department of Condensed Matter Physics, Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047, Japan.
J Electron Microsc (Tokyo). 2005;54 Suppl 1:i61-4. doi: 10.1093/jmicro/54.suppl_1.i61.
Electronic structures, exchange interaction mechanism between magnetic ions and Curie temperature of Vanadium-doped nitrides (AlN, GaN, and InN) are studied within KKR-LSDA-CPA. It is found that the ferromagnetic super-exchange interaction mechanism is dominant at low concentrations of Vanadium, but the anti-ferromagnetic super-exchange interaction appears and reduces the stabilization of ferromagnetism at sufficiently high concentrations (x > 0.10), especially for Vanadium-doped AlN and Vanadium-doped GaN. The estimation of the Curie temperature within the mean field approximation shows the Curie temperature of Vanadium-doped nitrides exceeding room temperature with a few constituents of Vanadium.
在KKR-LSDA-CPA框架下研究了钒掺杂氮化物（AlN、GaN和InN）的电子结构、磁性离子之间的交换相互作用机制以及居里温度。研究发现，在钒低浓度时，铁磁超交换相互作用机制占主导，但在足够高的浓度（x > 0.10）时，反铁磁超交换相互作用出现并降低了铁磁性的稳定性，特别是对于钒掺杂的AlN和钒掺杂的GaN。在平均场近似下对居里温度的估计表明，钒掺杂氮化物的居里温度在含有少量钒成分时超过室温。
