Ewels C P, Glerup M
LPS, CNRS UMR8502, Batîment 510, Université Paris Sud, 91405 Orsay, France.
J Nanosci Nanotechnol. 2005 Sep;5(9):1345-63. doi: 10.1166/jnn.2005.304.
Nitrogen doping of single and multi-walled carbon nanotubes is of great interest both fundamentally, to explore the effect of dopants on quasi-1D electrical conductors, and for applications such as field emission tips, lithium storage, composites and nanoelectronic devices. We present an extensive review of the current state of the art in nitrogen doping of carbon nanotubes, including synthesis techniques, and comparison with nitrogen doped carbon thin films and azofullerenes. Nitrogen doping significantly alters nanotube morphology, leading to compartmentalised 'bamboo' nanotube structures. We review spectroscopic studies of nitrogen dopants using techniques such as X-ray photoemission spectroscopy, electron energy loss spectroscopy and Raman studies, and associated theoretical models. We discuss the role of nanotube curvature and chirality (notably whether the nanotubes are metallic or semiconducting), and the effect of doping on nanotube surface chemistry. Finally we review the effect of nitrogen on the transport properties of carbon nanotubes, notably its ability to induce negative differential resistance in semiconducting tubes.
单壁和多壁碳纳米管的氮掺杂在基础研究方面具有重大意义,即探索掺杂剂对准一维电导体的影响,同时在诸如场发射尖端、锂存储、复合材料和纳米电子器件等应用领域也备受关注。我们对碳纳米管氮掺杂的当前技术水平进行了全面综述,包括合成技术,并与氮掺杂碳薄膜和氮杂富勒烯进行了比较。氮掺杂显著改变了纳米管的形态,导致形成分隔的“竹节状”纳米管结构。我们回顾了使用X射线光电子能谱、电子能量损失谱和拉曼研究等技术对氮掺杂剂的光谱研究以及相关的理论模型。我们讨论了纳米管曲率和手性的作用(特别是纳米管是金属性还是半导体性),以及掺杂对纳米管表面化学的影响。最后,我们回顾了氮对碳纳米管传输特性的影响,特别是其在半导体管中诱导负微分电阻的能力。